Quantity | excl. VAT | VAT incl. |
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1 - 9 | 0.16£ | 0.19£ |
10 - 24 | 0.15£ | 0.18£ |
25 - 49 | 0.14£ | 0.17£ |
50 - 99 | 0.13£ | 0.16£ |
100 - 249 | 0.12£ | 0.14£ |
250 - 499 | 0.12£ | 0.14£ |
500 - 2264 | 0.11£ | 0.13£ |
Quantity | U.P | |
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1 - 9 | 0.16£ | 0.19£ |
10 - 24 | 0.15£ | 0.18£ |
25 - 49 | 0.14£ | 0.17£ |
50 - 99 | 0.13£ | 0.16£ |
100 - 249 | 0.12£ | 0.14£ |
250 - 499 | 0.12£ | 0.14£ |
500 - 2264 | 0.11£ | 0.13£ |
NPN transistor, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V - BFR93A. NPN transistor, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 35mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. Conditioning: roll. Semiconductor material: silicon. FT: 6GHz. Function: UHF-A, RF wideband amplifiers and oscillators.. Max hFE gain: 90. Minimum hFE gain: 40. Marking on the case: R2. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 15V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 3000. Spec info: SMD R2. BE diode: no. CE diode: no. Quantity in stock updated on 22/04/2025, 01:25.
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