NPN transistor, TO-220, 10A, TO-220AB, 100V - BDX33C

NPN transistor, TO-220, 10A, TO-220AB, 100V - BDX33C. NPN transistor, TO-220, 10A, TO-220AB, 100V. Housing: TO-220. Collector current: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. RoHS: yes. Resistor B: 10k Ohms. BE diode: no. BE resistor: 150 Ohms. C(in): TO-220. Cost): TO-220. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: 10k Ohms (R1), 150 Ohms (R2). Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) BDX34C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Vebo: 2.5V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 07/06/2025, 12:25.