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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 3A, TO-220, TO-220, 100V - BD241C-ST

NPN transistor, 3A, TO-220, TO-220, 100V - BD241C-ST
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.52£ 0.62£
10 - 24 0.49£ 0.59£
25 - 49 0.46£ 0.55£
50 - 99 0.44£ 0.53£
100 - 249 0.40£ 0.48£
250 - 259 0.39£ 0.47£
Quantity U.P
1 - 9 0.52£ 0.62£
10 - 24 0.49£ 0.59£
25 - 49 0.46£ 0.55£
50 - 99 0.44£ 0.53£
100 - 249 0.40£ 0.48£
250 - 259 0.39£ 0.47£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 259
Set of 1

NPN transistor, 3A, TO-220, TO-220, 100V - BD241C-ST. NPN transistor, 3A, TO-220, TO-220, 100V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 13:25.

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Quantity in stock : 67
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TIP31C
NPN transistor, 3A, TO-220, TO-220, 100V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no
TIP31C
NPN transistor, 3A, TO-220, TO-220, 100V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no
Set of 1
0.64£ VAT incl.
(0.53£ excl. VAT)
0.64£

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