Quantity | excl. VAT | VAT incl. |
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1 - 9 | 0.30£ | 0.36£ |
10 - 24 | 0.28£ | 0.34£ |
25 - 49 | 0.27£ | 0.32£ |
50 - 99 | 0.27£ | 0.32£ |
100 - 249 | 0.26£ | 0.31£ |
250 - 499 | 0.23£ | 0.28£ |
500 - 532 | 0.22£ | 0.26£ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.30£ | 0.36£ |
10 - 24 | 0.28£ | 0.34£ |
25 - 49 | 0.27£ | 0.32£ |
50 - 99 | 0.27£ | 0.32£ |
100 - 249 | 0.26£ | 0.31£ |
250 - 499 | 0.23£ | 0.28£ |
500 - 532 | 0.22£ | 0.26£ |
NPN-Transistor, TO-126 (TO-225, SOT-32), TO-126, 80V, 1.5A - BD140-16. NPN-Transistor, TO-126 (TO-225, SOT-32), TO-126, 80V, 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Spec info: complementary transistor (pair) BD139-16. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 3A. Quantity in stock updated on 25/07/2025, 14:25.
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