NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V - BC856B

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 4	0.24£	0.29£
5 - 9	0.23£	0.28£
10 - 24	0.22£	0.26£
25 - 49	0.20£	0.24£
50 - 99	0.19£	0.23£
100 - 149	0.18£	0.22£
150 - 25159	0.17£	0.20£

Quantity (Set of 10)	U.P
1 - 4	0.24£	0.29£
5 - 9	0.23£	0.28£
10 - 24	0.22£	0.26£
25 - 49	0.20£	0.24£
50 - 99	0.19£	0.23£
100 - 149	0.18£	0.22£
150 - 25159	0.17£	0.20£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 251583

Set of 10

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V - BC856B. NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 475. Minimum hFE gain: 220. Ic(pulse): 200mA. Marking on the case: 3B. Equivalents: ON Semiconductor BC856BLT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.065V. Vebo: 5V. Spec info: screen printing/SMD code 3B. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 21:25.

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