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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, TO-92, 100mA, TO-92, 45V - BC560CG

NPN-Transistor, TO-92, 100mA, TO-92, 45V - BC560CG
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Quantity excl. VAT VAT incl.
1 - 9 0.10£ 0.12£
10 - 24 0.0972£ 0.1166£
25 - 49 0.0920£ 0.1104£
50 - 99 0.0869£ 0.1043£
100 - 249 0.0818£ 0.0982£
250 - 499 0.0767£ 0.0920£
500 - 3745 0.0716£ 0.0859£
Quantity U.P
1 - 9 0.10£ 0.12£
10 - 24 0.0972£ 0.1166£
25 - 49 0.0920£ 0.1104£
50 - 99 0.0869£ 0.1043£
100 - 249 0.0818£ 0.0982£
250 - 499 0.0767£ 0.0920£
500 - 3745 0.0716£ 0.0859£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 3745
Set of 1

NPN-Transistor, TO-92, 100mA, TO-92, 45V - BC560CG. NPN-Transistor, TO-92, 100mA, TO-92, 45V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Resistor B: yes. BE diode: PNP transistor. BE resistor: PCB soldering. C(in): TO-92. Cost): TO-226AA. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 100. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) BC550C. Quantity in stock updated on 20/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 825
BC560C

BC560C

NPN-Transistor, 100mA, TO-92, TO-92, 45V. Collector current: 100mA. Housing: TO-92. Housing (accordi...
BC560C
NPN-Transistor, 100mA, TO-92, TO-92, 45V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 380. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. Spec info: complementary transistor (pair) BC550C. BE diode: no. CE diode: no
BC560C
NPN-Transistor, 100mA, TO-92, TO-92, 45V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 380. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. Spec info: complementary transistor (pair) BC550C. BE diode: no. CE diode: no
Set of 10
1.02£ VAT incl.
(0.85£ excl. VAT)
1.02£

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