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Semiconductors Diodes Diode rectifier bridges

B500C5000A

B500C5000A
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[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.41£ 1.69£
5 - 9 1.34£ 1.61£
10 - 24 1.27£ 1.52£
25 - 35 1.20£ 1.44£
Quantity U.P
1 - 4 1.41£ 1.69£
5 - 9 1.34£ 1.61£
10 - 24 1.27£ 1.52£
25 - 35 1.20£ 1.44£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 35
Set of 1

B500C5000A. VRRM: 500V. Forward current (AV): 5A. Cj: 15pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 30A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: C5000/3300A, RS505. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 40x21.7x6.5mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Quantity in stock updated on 20/04/2025, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 18
B500C7000A

B500C7000A

Vrms: 500V. Forward current (AV): 7A. IFSM: 150A. MRI (min): 5uA. Number of terminals: 4. Pitch: 10x...
B500C7000A
Vrms: 500V. Forward current (AV): 7A. IFSM: 150A. MRI (min): 5uA. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 32x17x5.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
B500C7000A
Vrms: 500V. Forward current (AV): 7A. IFSM: 150A. MRI (min): 5uA. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 32x17x5.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
2.60£ VAT incl.
(2.17£ excl. VAT)
2.60£
Quantity in stock : 225
KBU6J

KBU6J

VRRM: 600V. Forward current (AV): 6A. Dielectric structure: Diode bridge. Semiconductor material: si...
KBU6J
VRRM: 600V. Forward current (AV): 6A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08mm. Dimensions: 23x19x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
KBU6J
VRRM: 600V. Forward current (AV): 6A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08mm. Dimensions: 23x19x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
Set of 1
0.92£ VAT incl.
(0.77£ excl. VAT)
0.92£

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Quantity in stock : 70
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RFT-3-15A

Max Continuous current: 3.15A. Fuse properties: time delay fuse (T). Voltage: 250V. Pitch: 5.1mm. ...
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KBL06

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VRRM: 600V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: si...
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RBV406

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TL494CN

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GBI10G

GBI10G

VRRM: 400V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
GBI10G
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S1WBS60

S1WBS60

VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
S1WBS60
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Quantity in stock : 90052
1N4007

1N4007

VRRM: 1000V. Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet):...
1N4007
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