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Semiconductors Diodes Diode rectifier bridges

ABS15J

ABS15J
Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.67£ 0.80£
3 - 4 0.64£ 0.77£
5 - 9 0.61£ 0.73£
10 - 19 0.57£ 0.68£
20 - 49 0.54£ 0.65£
50 - 61 0.47£ 0.56£
Quantity (Set of 5) U.P
1 - 2 0.67£ 0.80£
3 - 4 0.64£ 0.77£
5 - 9 0.61£ 0.73£
10 - 19 0.57£ 0.68£
20 - 49 0.54£ 0.65£
50 - 61 0.47£ 0.56£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 303
Set of 5

ABS15J. VRRM: 600V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Pitch: 5.08mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. Number of terminals: 4. Spec info: IFSM--50A (50Hz 10ms). Quantity in stock updated on 19/04/2025, 18:25.

Equivalent products :

Quantity in stock : 649
ABS15M

ABS15M

VRRM: 1000V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor mater...
ABS15M
VRRM: 1000V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50A (50Hz 10ms). Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V
ABS15M
VRRM: 1000V. Forward current (AV): 1.6...2A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.08mm. RoHS: yes. Spec info: IFSM--50A (50Hz 10ms). Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V
Set of 5
0.80£ VAT incl.
(0.67£ excl. VAT)
0.80£
Quantity in stock : 1097
B1000S1500

B1000S1500

VRRM: 1000V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. S...
B1000S1500
VRRM: 1000V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
B1000S1500
VRRM: 1000V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Pitch: 5.2mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 1
0.65£ VAT incl.
(0.54£ excl. VAT)
0.65£

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Quantity in stock : 251
MB6S-E3-80

MB6S-E3-80

VRRM: 600V. Forward current (AV): 0.5A. Semiconductor material: silicon. Function: 230V mains rectif...
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B1000D

B1000D

VRRM: 1000V. Forward current (AV): 1A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode b...
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DB107S

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VRRM: 1000V. Forward current (AV): 1A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
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S1WB80B

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VRRM: 800V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
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Quantity in stock : 73
BTB16-600CW

BTB16-600CW

IT(RSM) (TC=85°C): 16A. It's M: 160A. Housing: TO-220. Housing (according to data sheet): TO-220AB....
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FQPF8N60C

FQPF8N60C

N-channel transistor, PCB soldering, ITO-220, 600V, 7.6A, TO-220FP, TO-220F, 600V, 1. Housing: PCB s...
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Quantity in stock : 12
S1WB60B

S1WB60B

VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
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Quantity in stock : 34
S1WBS60

S1WBS60

VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: si...
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1.93£ VAT incl.
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1.93£
Quantity in stock : 12865
1N4004

1N4004

Housing: DO-41. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( DO-2...
1N4004
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