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N-channel transistor, 7A, 7A, 1.62 Ohms, TO-220FP, TO-220F15, 800V - 2SK3264-01MR

N-channel transistor, 7A, 7A, 1.62 Ohms, TO-220FP, TO-220F15, 800V - 2SK3264-01MR
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Quantity excl. VAT VAT incl.
1 - 1 7.68£ 9.22£
Quantity U.P
1 - 1 7.68£ 9.22£
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Quantity in stock : 1
Set of 1

N-channel transistor, 7A, 7A, 1.62 Ohms, TO-220FP, TO-220F15, 800V - 2SK3264-01MR. N-channel transistor, 7A, 7A, 1.62 Ohms, TO-220FP, TO-220F15, 800V. ID (T=25°C): 7A. Idss (max): 7A. On-resistance Rds On: 1.62 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Id(imp): 28A. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Technology: SILICON POWER MOS-FET. Quantity per case: 1. Function: High Speed Switching, Low on-res, Low driving power. Quantity in stock updated on 20/04/2025, 22:25.

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STP7NK80ZFP

STP7NK80ZFP

N-channel transistor, TO-220FP, 3.3A, 5.2A, 1uA, 50uA, 1.5 Ohms, TO-220FP, 800V, 1.8 Ohms, 800V. Hou...
STP7NK80ZFP
N-channel transistor, TO-220FP, 3.3A, 5.2A, 1uA, 50uA, 1.5 Ohms, TO-220FP, 800V, 1.8 Ohms, 800V. Housing: TO-220FP. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss: 1uA. Idss (max): 50uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. On-resistance Rds On: 1.8 Ohms. Drain-source voltage (Vds): 800V. Channel type: N. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. Id(imp): 20.8A. IDss (min): 1uA. Marking on the case: P7NK80ZFP. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH. Operating temperature: -55...+150°C. Vgs(th) min.: 3.75V. Type of transistor: MOSFET power transistor. Max drain current: 5.2A. Number of terminals: 3. Spec info: Zener-Protected SuperMESH™Power MOSFET. G-S Protection: yes
STP7NK80ZFP
N-channel transistor, TO-220FP, 3.3A, 5.2A, 1uA, 50uA, 1.5 Ohms, TO-220FP, 800V, 1.8 Ohms, 800V. Housing: TO-220FP. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss: 1uA. Idss (max): 50uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. On-resistance Rds On: 1.8 Ohms. Drain-source voltage (Vds): 800V. Channel type: N. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. Id(imp): 20.8A. IDss (min): 1uA. Marking on the case: P7NK80ZFP. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH. Operating temperature: -55...+150°C. Vgs(th) min.: 3.75V. Type of transistor: MOSFET power transistor. Max drain current: 5.2A. Number of terminals: 3. Spec info: Zener-Protected SuperMESH™Power MOSFET. G-S Protection: yes
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