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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5A, 250uA, 2.1 Ohms, TO-220FP, TO-220F15, 900V - 2SK2671

N-channel transistor, 5A, 250uA, 2.1 Ohms, TO-220FP, TO-220F15, 900V - 2SK2671
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Quantity excl. VAT VAT incl.
1 - 4 4.27£ 5.12£
5 - 9 4.06£ 4.87£
10 - 24 3.84£ 4.61£
25 - 31 3.63£ 4.36£
Quantity U.P
1 - 4 4.27£ 5.12£
5 - 9 4.06£ 4.87£
10 - 24 3.84£ 4.61£
25 - 31 3.63£ 4.36£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 31
Set of 1

N-channel transistor, 5A, 250uA, 2.1 Ohms, TO-220FP, TO-220F15, 900V - 2SK2671. N-channel transistor, 5A, 250uA, 2.1 Ohms, TO-220FP, TO-220F15, 900V. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 2.1 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 900V. C(in): 1140pF. Cost): 105pF. Channel type: N. Trr Diode (Min.): na. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): na. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 55 ns. Technology: HVX-2 Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Quantity per case: 1. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 20/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 9
2SK2717

2SK2717

N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 10...
2SK2717
N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 1200pF. Cost): 20pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Id(imp): 15A. Marking on the case: K2717. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes
2SK2717
N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 1200pF. Cost): 20pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Id(imp): 15A. Marking on the case: K2717. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes
Set of 1
10.02£ VAT incl.
(8.35£ excl. VAT)
10.02£
Quantity in stock : 26
2SK2651

2SK2651

N-channel transistor, 3A, 6A, 500uA, 1.78 Ohms, TO-220FP, TO-220F15, 900V. ID (T=100°C): 3A. ID (T=...
2SK2651
N-channel transistor, 3A, 6A, 500uA, 1.78 Ohms, TO-220FP, TO-220F15, 900V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 500uA. On-resistance Rds On: 1.78 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 900V. C(in): 900pF. Cost): 130pF. Channel type: N. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 24A. IDss (min): 10uA. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
2SK2651
N-channel transistor, 3A, 6A, 500uA, 1.78 Ohms, TO-220FP, TO-220F15, 900V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 500uA. On-resistance Rds On: 1.78 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 900V. C(in): 900pF. Cost): 130pF. Channel type: N. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 24A. IDss (min): 10uA. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
4.33£ VAT incl.
(3.61£ excl. VAT)
4.33£

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