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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.1A, 210V - 2SC1127-2

NPN transistor, 0.1A, 210V - 2SC1127-2
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 1.59£ 1.91£
Quantity U.P
1 - 1 1.59£ 1.91£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1
Set of 1

NPN transistor, 0.1A, 210V - 2SC1127-2. NPN transistor, 0.1A, 210V. Collector current: 0.1A. Collector/emitter voltage Vceo: 210V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 7.9W. Type of transistor: NPN. Spec info: 8-726-720-00. Quantity in stock updated on 21/04/2025, 06:25.

Equivalent products :

Quantity in stock : 57
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BF459
NPN transistor, 100mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector current: 100mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Cost): 5.5pF. Semiconductor material: silicon. FT: 90 MHz. Function: VID-L. Minimum hFE gain: 25. Ic(pulse): 300mA. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BF459
NPN transistor, 100mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector current: 100mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Cost): 5.5pF. Semiconductor material: silicon. FT: 90 MHz. Function: VID-L. Minimum hFE gain: 25. Ic(pulse): 300mA. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
1.13£ VAT incl.
(0.94£ excl. VAT)
1.13£

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