NPN-Transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 120V - 2SB688

NPN-Transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 120V - 2SB688. NPN-Transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 8A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE gain: 55. Marking on the case: B668. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD718. Quantity in stock updated on 21/04/2025, 02:25.