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NPN transistor, 20A, TO-3 ( TO-204 ), TO-3, 100V - 2N6284

NPN transistor, 20A, TO-3 ( TO-204 ), TO-3, 100V - 2N6284
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Quantity excl. VAT VAT incl.
1 - 1 8.08£ 9.70£
2 - 2 7.68£ 9.22£
3 - 4 7.27£ 8.72£
5 - 9 6.87£ 8.24£
10 - 19 6.71£ 8.05£
Quantity U.P
1 - 1 8.08£ 9.70£
2 - 2 7.68£ 9.22£
3 - 4 7.27£ 8.72£
5 - 9 6.87£ 8.24£
10 - 19 6.71£ 8.05£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 19
Set of 1

NPN transistor, 20A, TO-3 ( TO-204 ), TO-3, 100V - 2N6284. NPN transistor, 20A, TO-3 ( TO-204 ), TO-3, 100V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: 8k Ohms (R1), 60 Ohms (R2). Cost): 400pF. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: kHz. Function: hFE 750...180000. Max hFE gain: 18000. Minimum hFE gain: 750. Ic(pulse): 40A. Number of terminals: 2. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: complementary transistor (pair) 2N6287. Weight: 11.8g. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 10/05/2025, 08:25.

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Quantity in stock : 36
MJ11016G

MJ11016G

NPN transistor, 30A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 30A. Housing: TO-3 (...
MJ11016G
NPN transistor, 30A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 4pF. Cost): TO-204AA. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Minimum hFE gain: 1000. Ic(pulse): +200°C. Note: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJ11015. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V
MJ11016G
NPN transistor, 30A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 4pF. Cost): TO-204AA. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Minimum hFE gain: 1000. Ic(pulse): +200°C. Note: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJ11015. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V
Set of 1
13.25£ VAT incl.
(11.04£ excl. VAT)
13.25£

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