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NPN-Transistor, 140mA, TO-126, 160V, TO-126 (TO-225, SOT-32) - 2SA1209

NPN-Transistor, 140mA, TO-126, 160V, TO-126 (TO-225, SOT-32) - 2SA1209
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Quantity excl. VAT VAT incl.
1 - 4 1.85£ 2.22£
5 - 9 1.76£ 2.11£
10 - 24 1.67£ 2.00£
25 - 49 1.57£ 1.88£
50 - 99 1.54£ 1.85£
100 - 249 1.50£ 1.80£
250+ 1.43£ 1.72£
Quantity U.P
1 - 4 1.85£ 2.22£
5 - 9 1.76£ 2.11£
10 - 24 1.67£ 2.00£
25 - 49 1.57£ 1.88£
50 - 99 1.54£ 1.85£
100 - 249 1.50£ 1.80£
250+ 1.43£ 1.72£
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN-Transistor, 140mA, TO-126, 160V, TO-126 (TO-225, SOT-32) - 2SA1209. NPN-Transistor, 140mA, TO-126, 160V, TO-126 (TO-225, SOT-32). Collector current: 140mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Marking on the case: A1209. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2911. Quantity in stock updated on 15/04/2025, 16:25.

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Quantity in stock : 10
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NPN-Transistor, 0.1A, 180V. Collector current: 0.1A. Collector/emitter voltage Vceo: 180V. Quantity ...
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NPN-Transistor, 0.1A, 180V. Collector current: 0.1A. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Pd (Power Dissipation, Max): 8W. Type of transistor: PNP
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NPN-Transistor, 0.1A, 180V. Collector current: 0.1A. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Pd (Power Dissipation, Max): 8W. Type of transistor: PNP
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NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Marking on the case: A1013-Y. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.6V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no
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