NPN bipolar transistors

NPN transistor, 12A, 600V. Collector current: 12A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: Vce(sat) 3V. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Note: Monitor HA (F). Spec info: VEBO 5V. CE diode: yes

NPN transistor, 5A, D-PAK ( TO-252 ), CPT3 ( DPAK ) ( TO252 ) ( SOT428 ), 80V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): CPT3 ( DPAK ) ( TO252 ) ( SOT428 ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 270. Minimum hFE gain: 120. Ic(pulse): 10A. Marking on the case: C5103. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 0.3 ns. Tf(min): 0.1 ns. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V. Function: Motor driver, LED driver. Spec info: complementary transistor (pair) 2SA1952

NPN transistor, 10A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 20A. Marking on the case: C5129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: fall time 0.15..03us (64kHz). CE diode: yes

NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Function: HA, Hi-res. CE diode: yes

NPN transistor, 20A, TO-264 ( TOP-3L ), TO-264 ( 2-21F2A ), 600V. Collector current: 20A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F2A ). Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 40A. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Spec info: Monitor -HA

NPN transistor, 8A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 8A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Max hFE gain: 25. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V. Function: Horizontal Deflection Output, high speed Switch

NPN transistor, 8A, 2-16E3A, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 8A. Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: fast operation, for horizontal deflection (TV). Max hFE gain: 25. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: C5149. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.5us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Spec info: 'Triple Diffused MESA Type'

NPN transistor, 10A, 700V. Collector current: 10A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: VCE(sat) 3V max. Note: MONITOR, HA,Hi-res, fT--2MHz. Type of transistor: NPN. Vcbo: 1700V. Spec info: TO-3P (Plastic). CE diode: yes

NPN transistor, 2A, TO-220FP, TO-220F, 180V. Collector current: 2A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 50. Marking on the case: C5171. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.16V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1930. Function: TV, SL. BE diode: no. CE diode: no

NPN transistor, 8A, 120V. Collector current: 8A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SA1940

NPN transistor, 10A, TO-3PN ( 2-16C1B ), 2-16C1B, 140V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Collector/emitter voltage Vceo: 140V. Cost): 170pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5198 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1941. BE diode: no. CE diode: no

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no

NPN transistor, 230V, 15A, TO-264. Collector-Emitter Voltage VCEO: 230V. Collector current: 15A. Housing: TO-264. Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Max frequency: 30MHz. Power: 150W

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), 2-16C1A, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 230V. Cost): 200pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 5. Marking on the case: C5242. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Spec info: complementary transistor (pair) 2SA1962. BE diode: no. CE diode: no

NPN transistor, 15A, TO-264 ( TOP-3L ), TOP-3L, 1700V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 1700V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: High Speed ​​Switching. Max hFE gain: 12. Minimum hFE gain: 5. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion mesa type'. Tf(max): 0.2us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Vebo: 6V

NPN transistor, 12A, 800V. Collector current: 12A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: Display-HA. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: MONITOR. CE diode: yes

NPN transistor, 8A, TO-3PML, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 8A. Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). BE resistor: 43 Ohms. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 25. Minimum hFE gain: 15. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.1 ns. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. BE diode: no. CE diode: yes

NPN transistor, 8A, TO-3PML, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 8A. Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 30. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V

NPN transistor, 10A, TO-3PML, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: For high resolution horizontal deflection. Max hFE gain: 30. Minimum hFE gain: 20. Ic(pulse): 25A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Spec info: Display-HA MONITOR. BE diode: no. CE diode: no

NPN transistor, 20A, 800V. Collector current: 20A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 120W. Type of transistor: NPN. Vcbo: 1500V. Spec info: 8.729.033.99. CE diode: yes

NPN transistor, 15A, TO-3PML, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 15A. Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Ultrahigh-Definition CRT Display. Max hFE gain: 30. Minimum hFE gain: 4. Ic(pulse): 35A. Marking on the case: C5302. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: fast speed (tf=100ns typ)

NPN transistor, PCB soldering, D35/B, 20mA. Housing: PCB soldering. Housing: D35/B. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.1W

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SA1987. CE diode: yes

NPN transistor, 150mA, TO-92, TO-92S, 50V. Collector current: 150mA. Housing: TO-92. Housing (according to data sheet): TO-92S. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Ic(pulse): 400mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Spec info: complementary transistor (pair) 2SA608. CE diode: yes

NPN transistor, 8A, TO-3PF, 600V, TO-3PF (SOT399, 2-16E3A). Collector current: 8A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A). Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: High Switching, Horizontal Deflection out. Max hFE gain: 35. Minimum hFE gain: 4.3. Ic(pulse): 16A. Marking on the case: C5386. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: MONITOR Hi-res