BYT30P-1000

BYT30P-1000. Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 70 ns. Semiconductor material: silicon. MRI (max): 5mA. MRI (min): 100uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.8V. Number of terminals: 2. Note: metal part connected to the cathode. Quantity per case: 1. Spec info: IFSM--200Ap t=10ms. Quantity in stock updated on 21/04/2025, 00:25.