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Semiconductors Diodes

BAT85S

BAT85S
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.10£ 0.12£
10 - 24 0.0976£ 0.1171£
25 - 49 0.0925£ 0.1110£
50 - 99 0.0904£ 0.1085£
100 - 249 0.0873£ 0.1048£
250 - 499 0.0761£ 0.0913£
500 - 8683 0.0724£ 0.0869£
Quantity U.P
1 - 9 0.10£ 0.12£
10 - 24 0.0976£ 0.1171£
25 - 49 0.0925£ 0.1110£
50 - 99 0.0904£ 0.1085£
100 - 249 0.0873£ 0.1048£
250 - 499 0.0761£ 0.0913£
500 - 8683 0.0724£ 0.0869£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 8683
Set of 1

BAT85S. Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 30 v. Cj: 10pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 2uA. MRI (min): 2uA. Marking on the case: BAT85S. Number of terminals: 2. Temperature: +125°C. RoHS: yes. Spec info: IFMS 5Ap/10ms. Pitch: 1.6x3.9mm. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV. Original product from manufacturer Vishay (general Semiconductor). Quantity in stock updated on 07/06/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 55
BAT86S

BAT86S

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): D...
BAT86S
Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 50V. Cj: 8pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 5uA. Marking on the case: BTA86S. Number of terminals: 2. Temperature: +125°C. Dimensions: 3.9x1.6mm. RoHS: yes. Spec info: IFMS 5Ap/10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV
BAT86S
Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 50V. Cj: 8pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 5uA. Marking on the case: BTA86S. Number of terminals: 2. Temperature: +125°C. Dimensions: 3.9x1.6mm. RoHS: yes. Spec info: IFMS 5Ap/10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV
Set of 1
0.26£ VAT incl.
(0.22£ excl. VAT)
0.26£

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1N5399

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1N5408

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1878-8729

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EGP20F

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Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VR...
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