Electronic components and equipment, for businesses and individuals

1N5406

1N5406
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Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.50£ 0.60£
3 - 4 0.48£ 0.58£
5 - 9 0.45£ 0.54£
10 - 19 0.43£ 0.52£
20 - 49 0.40£ 0.48£
50 - 99 0.35£ 0.42£
100 - 607 0.33£ 0.40£
Quantity (Set of 5) U.P
1 - 2 0.50£ 0.60£
3 - 4 0.48£ 0.58£
5 - 9 0.45£ 0.54£
10 - 19 0.43£ 0.52£
20 - 49 0.40£ 0.48£
50 - 99 0.35£ 0.42£
100 - 607 0.33£ 0.40£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 3034
Set of 5

1N5406. Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Spec info: IFSM--200Ap t=8.3ms. Quantity in stock updated on 20/04/2025, 22:25.

Equivalent products :

Quantity in stock : 9370
1N5408

1N5408

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2...
1N5408
Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 1000V. Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms
1N5408
Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 1000V. Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms
Set of 1
0.12£ VAT incl.
(0.10£ excl. VAT)
0.12£
Quantity in stock : 2686
BY255

BY255

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Conf...
BY255
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1.3 kV. Leakage current on closing Ir [A]: 5uA. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.1V @ 3A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V
BY255
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1.3 kV. Leakage current on closing Ir [A]: 5uA. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.1V @ 3A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V
Set of 1
0.14£ VAT incl.
(0.12£ excl. VAT)
0.14£
Quantity in stock : 278
1N5406H

1N5406H

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2...
1N5406H
Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Note: center distance 15mm. Spec info: IFSM--200Ap t=8.3ms
1N5406H
Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Note: center distance 15mm. Spec info: IFSM--200Ap t=8.3ms
Set of 10
1.14£ VAT incl.
(0.95£ excl. VAT)
1.14£

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Quantity in stock : 9370
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1N5349B

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Forward current (AV): 5A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD. ...
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TRAFO9V-6-0

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1N5402

1N5402

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2...
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