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Semiconductors Diodes Standard and Rectifier Diodes

1N5394

1N5394
[TITLE]
[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 3 0.54£ 0.65£
Quantity (Set of 10) U.P
1 - 3 0.54£ 0.65£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 23
Set of 10

1N5394. Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 300V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap. Quantity in stock updated on 19/04/2025, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 264
1N5399

1N5399

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3....
1N5399
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
1N5399
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
Set of 10
0.56£ VAT incl.
(0.47£ excl. VAT)
0.56£
Quantity in stock : 55
1N5396

1N5396

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3....
1N5396
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 500V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
1N5396
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 500V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
Set of 10
0.67£ VAT incl.
(0.56£ excl. VAT)
0.67£

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