MB10F, 0.5A, 1000V. Forward current (AV): 0.5A. VRRM: 1000V. Assembly/installation: surface-mounted component (SMD). Dielectric structure: Diode bridge. Dimensions: 4.8x3.8x1.4mm. Equivalents: MB10S. Forward voltage Vf (min): 1V. Housing (according to data sheet): MBF. IFSM: 25A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Operating temperature: -55...+150°C. Pitch: 2.5mm. Quantity per case: 4. RoHS: yes. Semiconductor material: silicon. Spec info: maximum thickness 1.6mm. Threshold voltage Vf (max): 1V. Original product from manufacturer: Lge Technology. Minimum quantity: 5. Quantity in stock updated on 12/11/2025, 20:33