IGBT transistor SGW30N60HS

IGBT transistor SGW30N60HS. IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G30N60HS. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 41A. Maximum collector current (A): 112A. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 122 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): plastic tube. Assembly/installation: PCB through-hole mounting. Td(off): 106 ns. Td(on): 16 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 08/06/2025, 00:25.