IGBT transistor IRGB14C40LPBF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 6.85£ | 8.22£ |
| 2 - 2 | 6.51£ | 7.81£ |
| 3 - 4 | 6.17£ | 7.40£ |
| 5 - 9 | 5.83£ | 7.00£ |
| 10 - 12 | 5.69£ | 6.83£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 6.85£ | 8.22£ |
| 2 - 2 | 6.51£ | 7.81£ |
| 3 - 4 | 6.17£ | 7.40£ |
| 5 - 9 | 5.83£ | 7.00£ |
| 10 - 12 | 5.69£ | 6.83£ |
IGBT transistor IRGB14C40LPBF. IGBT transistor. C(in): 825pF. Cost): 150pF. Channel type: N. Conditioning: plastic tube. Collector current: 20A. Ic(T=100°C): 14A. Marking on the case: GB14C40L. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8.3 ns. Td(on): 1.35 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 1.3V. Gate/emitter voltage VGE(th)max.: 2.2V. Number of terminals: 3. Note: > 6KV ESD Gate Protection. Note: integrated resistors R1 G (75 Ohms), R2 GE (20k Ohms). Conditioning unit: 50. Spec info: IGBT with on-chip Gate-Emitter and Gate-Collector. CE diode: no. Germanium diode: yes. Quantity in stock updated on 21/04/2025, 01:25.
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