IGBT transistor IRG4PF50WPBF

IGBT transistor IRG4PF50WPBF. IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PF50W. Collector-emitter voltage Uce [V]: 900V. Collector current Ic [A]: 51A. Switch-on time ton [nsec.]: 29 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 200W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 29 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.25V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 900V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Maximum collector current (A): 204A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 21/04/2025, 01:25.