DB102G, 1A, 100V. Forward current (AV): 1A. VRRM: 100V. Assembly/installation: PCB through-hole mounting. Cj: 25pF. Dielectric structure: Diode bridge. Forward voltage Vf (min): 1.1V. Housing (according to data sheet): DIP-4. Housing: DIP. IFSM: 30A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Operating temperature: -65...+150°C. Pitch: 5.08mm. Quantity per case: 4. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--50Ap. Three-phase: 0. Threshold voltage Vf (max): 1.1V. Original product from manufacturer: Kingtronics. Quantity in stock updated on 12/11/2025, 20:33