Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.30£ | 0.36£ |
10 - 24 | 0.29£ | 0.35£ |
25 - 49 | 0.27£ | 0.32£ |
50 - 64 | 0.26£ | 0.31£ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.30£ | 0.36£ |
10 - 24 | 0.29£ | 0.35£ |
25 - 49 | 0.27£ | 0.32£ |
50 - 64 | 0.26£ | 0.31£ |
SMBJ5-0A. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 100A. Marking on the case: KD. Breakdown voltage: 5V. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO214AB ( 5.2x3.6mm ). Tolerance: 5%. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. Number of terminals: 2. Quantity per case: 1. Note: screen printing/SMD code KD. Spec info: Ppk--600W t=1ms, IFSM--100Ap t=8.3ms. Quantity in stock updated on 20/04/2025, 14:25.
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