P1000M, R-6, 10A, 10A, 400A, R-6 ( 8x7.5mm ), 1000V. Housing: R-6. Forward current (AV): 10A. Average Rectified Current per Diode: 10A. IFSM: 400A. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Cj: 70pF. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.05V. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 80A. Forward Voltage (Max): <0.9V / 5A. Forward voltage Vf (min): 0.9V. Information: -. Leakage current: 10uA. MRI (max): -. MRI (min): 10uA. MSL: -. Marking on the case: P1000M. Max reverse voltage: 1kV. Mounting Type: THT. Number of terminals: 2. Operating temperature: -50...+175°C. Pulse current max.: 400A. Quantity per case: 1. Reaction time: 1.5us. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: P1000. Spec info: IFSM--800Ap t=10mS. Threshold voltage Vf (max): 1.05V. Threshold voltage: 1.05V. Trr Diode (Min.): 1500 ns. Original product from manufacturer: Diotec Semiconductor. Quantity in stock updated on 31/10/2025, 08:27