NPN transistor SMBTA42, SOT-23 ( TO-236 ), 4.87k Ohms, 0.5A, SOT-23, 300V. Housing: SOT-23 ( TO-236 ). Collector-Emitter Voltage VCEO: 4.87k Ohms. Collector current: 0.5A. Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. Assembly/installation: surface-mounted component (SMD). BE diode: no. Bandwidth MHz: 50MHz. C(in): 11pF. CE diode: no. Collector-Base Voltage VCBO: 4.87k Ohms. Cost): 1.5pF. Current Max 1: 0.5A. DC Collector/Base Gain hFE min.: 25. FT: 50 MHz. Function: high voltage amplifier, SMD version of MPSA42. Information: -. MSL: -. Marking on the case: s1D. Max hFE gain: -. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 25. Mounting Type: SMD. Note: complementary transistor (pair) SMBTA92. Pd (Power Dissipation, Max): 0.36W. Polarity: NPN. Power: 0.36W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: SMBTA. Spec info: screen printing/SMD code S1D. Type of transistor: NPN. Type: transistor for low power applications. Vcbo: 300V. Vebo: 5V. Original product from manufacturer: Infineon Technologies. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 02:22