NPN-Transistor PBSS4041PX, 5A, SOT-89, SOT89 (SC-62), 60V

NPN-Transistor PBSS4041PX, 5A, SOT-89, SOT89 (SC-62), 60V

Quantity
Unit price
1-4
1.17£
5-24
1.01£
25-49
0.91£
50-99
0.84£
100+
0.75£
Quantity in stock: 95

NPN-Transistor PBSS4041PX, 5A, SOT-89, SOT89 (SC-62), 60V. Collector current: 5A. Housing: SOT-89. Housing (according to data sheet): SOT89 (SC-62). Collector/emitter voltage Vceo: 60V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 85pF. FT: 110 MHz. Function: High-Current Switching, low-saturation voltage. Ic(pulse): 15A. Marking on the case: 6g. Max hFE gain: 300. Maximum saturation voltage VCE(sat): 300mV. Minimum hFE gain: 80. Note: PBSS4041NX. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.6W. Quantity per case: 1. Saturation voltage VCE(sat): 60mV. Semiconductor material: silicon. Spec info: screen printing/SMD code 6G. Tf (type): 75 ns. Type of transistor: PNP. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 13/11/2025, 02:22

Technical documentation (PDF)
PBSS4041PX
27 parameters
Collector current
5A
Housing
SOT-89
Housing (according to data sheet)
SOT89 (SC-62)
Collector/emitter voltage Vceo
60V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Cost)
85pF
FT
110 MHz
Function
High-Current Switching, low-saturation voltage
Ic(pulse)
15A
Marking on the case
6g
Max hFE gain
300
Maximum saturation voltage VCE(sat)
300mV
Minimum hFE gain
80
Note
PBSS4041NX
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.6W
Quantity per case
1
Saturation voltage VCE(sat)
60mV
Semiconductor material
silicon
Spec info
screen printing/SMD code 6G
Tf (type)
75 ns
Type of transistor
PNP
Vcbo
60V
Vebo
5V
Original product from manufacturer
Nxp Semiconductors