NPN transistor MMSS8050-H, 1.5A, SOT-23 ( TO-236 ), SOT-23, 25V
Quantity
Unit price
10-49
0.0899£
50-99
0.0762£
100-199
0.0647£
200+
0.0496£
| Quantity in stock: 1411 |
NPN transistor MMSS8050-H, 1.5A, SOT-23 ( TO-236 ), SOT-23, 25V. Collector current: 1.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 25V. BE diode: no. CE diode: no. Cost): 9pF. FT: 100 MHz. Function: -. Marking on the case: Y1. Max hFE gain: 350. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 200. Pd (Power Dissipation, Max): 0.3W. Quantity per case: 1. Semiconductor material: silicon. Spec info: -. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Vebo: 6V. Original product from manufacturer: M.c.c. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:37
MMSS8050-H
21 parameters
Collector current
1.5A
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23
Collector/emitter voltage Vceo
25V
BE diode
no
CE diode
no
Cost)
9pF
FT
100 MHz
Marking on the case
Y1
Max hFE gain
350
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
200
Pd (Power Dissipation, Max)
0.3W
Quantity per case
1
Semiconductor material
silicon
Technology
'Epitaxial Silicon Transistor'
Type of transistor
NPN
Vcbo
40V
Vebo
6V
Original product from manufacturer
M.c.c
Minimum quantity
10