NPN transistor MMBT5551, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 160V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Conditioning unit: 3000. Conditioning: roll. Equivalents: MMBT5551LT1G. FT: 100 MHz. Marking on the case: G1. Max hFE gain: 250. Minimum hFE gain: 60. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 300mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.15V. Semiconductor material: silicon. Spec info: screen printing/SMD code G1 (3S Fairchild). Type of transistor: NPN. Vcbo: 180V. Vebo: 6V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:37