NPN transistor MMBT4401LT1G, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Conditioning unit: 3000. Conditioning: roll. Cost): 80pF. FT: 250 MHz. Function: Switching Transistor. Ic(pulse): 0.9A. Marking on the case: 2x. Max hFE gain: 300. Minimum hFE gain: 20. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 300mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: screen printing/CMS code 2X. Tf(max): 30 ns. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:37