NPN transistor MMBT3904LT1G, SOT-23 ( TO-236 ), 200mA, 0.2A, SOT-23, 60V. Housing: SOT-23 ( TO-236 ). Collector current Ic [A], max.: 200mA. Collector current: 0.2A. Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 60V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Collector current Ic [A]: 0.2A. Collector-emitter voltage Uceo [V]: 40V. Component family: NPN transistor. Configuration: surface-mounted component (SMD). Cost): 1.6pF. Cutoff frequency ft [MHz]: 300 MHz. FT: 300 MHz. Frequency: 300MHz. Function: UNI. Housing (JEDEC standard): TO-236. Manufacturer's marking: 1AM. Marking on the case: 1AM. Max hFE gain: 300. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.225W. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.2W. Polarity: bipolar. Power: 300mW. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: SMD 1AM. Type of transistor: NPN. Vcbo: 40V. Voltage (collector - emitter): 40V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:37