NPN-Transistor MJE15035G, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 2.5pF. FT: 30 MHz. Ic(pulse): 8A. Max hFE gain: 100. Minimum hFE gain: 10. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Spec info: hFE=100 (Min) @ IC=0.5Adc. Type of transistor: PNP. Vcbo: 350V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 31/10/2025, 09:27