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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 3A, TO-220FP, TO-220, 60V - KSB1366GTU

NPN-Transistor, 3A, TO-220FP, TO-220, 60V - KSB1366GTU
Quantity excl. VAT VAT incl.
1 - 4 1.53£ 1.84£
5 - 9 1.46£ 1.75£
10 - 24 1.41£ 1.69£
25 - 49 1.38£ 1.66£
50 - 73 1.35£ 1.62£
Quantity U.P
1 - 4 1.53£ 1.84£
5 - 9 1.46£ 1.75£
10 - 24 1.41£ 1.69£
25 - 49 1.38£ 1.66£
50 - 73 1.35£ 1.62£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 73
Set of 1

NPN-Transistor, 3A, TO-220FP, TO-220, 60V - KSB1366GTU. NPN-Transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 35pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: B1366-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) KSD2012. Assembly/installation: PCB through-hole mounting. Technology: Silicon PNP Triple Diffused Type. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Original product from manufacturer Fairchild. Quantity in stock updated on 26/07/2025, 09:25.

Technical documentation

Equivalent products :

Out of stock
2SD2012

2SD2012

NPN transistor, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (accor...
2SD2012
NPN transistor, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 35pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SB1366. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V
2SD2012
NPN transistor, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 35pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SB1366. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V
Set of 1
1.76£ VAT incl.
(1.47£ excl. VAT)
1.76£

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