NPN transistor BFS20, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. Collector current: 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 20V. Assembly/installation: surface-mounted component (SMD). FT: 450 MHz. Function: 'IF and VHF thick and thin-film circuit'. Ic(pulse): 25mA. Marking on the case: G1*. Max hFE gain: 140. Minimum hFE gain: 40. Note: screen printing/SMD code G1p, G1t, G1W. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 200mW. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 30 v. Vebo: 4 v. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 13:31