NPN-Transistor BD912, TO-220, TO-220AB, -100V, 100V, 15A, 15A, TO-220, 100V. Housing: TO-220. Housing (JEDEC standard): TO-220AB. Collector-Emitter Voltage VCEO: -100V. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Collector current: 15A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 3MHz. CE diode: no. Collector current Ic [A]: 15A. Collector-Base Voltage VCBO: -100V. Component family: PNP power transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: -15A. Cutoff frequency ft [MHz]: 3 MHz. DC Collector/Base Gain hFE min.: 5. FT: 3 MHz. Frequency: 3MHz. Function: Power Linear and Switching. Information: -. MSL: -. Manufacturer's marking: BD911. Max hFE gain: 250. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 90W. Minimum hFE gain: 40. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 90W. Polarity: bipolar. Power: 90W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Series: BD. Spec info: complementary transistor (pair) BD911. Temperature: +150°C. Type of transistor: PNP. Type: Power. Vcbo: 100V. Vebo: 5V. Voltage (collector - emitter): 100V. Original product from manufacturer: Cdil. Quantity in stock updated on 13/11/2025, 04:24