NPN-Transistor BC859C, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Assembly/installation: surface-mounted component (SMD). FT: 100 MHz. Function: general purpose. Ic(pulse): 200mA. Marking on the case: 3 G. Max hFE gain: 800. Minimum hFE gain: 420. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: screen printing/SMD code 3G/4C. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34