NPN-Transistor BC857C, SOT-23 ( TO-236 ), 100mA, SOT-23 ( TO236 ), 45V. Housing: SOT-23 ( TO-236 ). Collector current: 100mA. Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Collector current Ic [A]: 100mA. FT: 100 MHz. Function: general purpose. Gain hfe: 520. Ic(pulse): 200mA. Marking on the case: 3 G. Max hFE gain: 800. Minimum hFE gain: 420. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.25W. Polarity: bipolar. Power: 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.075V. Semiconductor material: silicon. Spec info: screen printing/CMS code 3G. Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Voltage (collector - emitter): 50V, 45V. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34