NPN-Transistor BC558B, TO-92, 100mA, TO-92, 30 v. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 100mA. Conditioning: Ammo Pack. FT: 150 MHz. Frequency: 150MHz. Function: Switching, and AF Amplifier. Ic(pulse): 200mA. Max hFE gain: 450. Minimum hFE gain: 200. Number of terminals: 3. Operating temperature: -65...+150°C. Packaging: Ammo Pack. Pd (Power Dissipation, Max): 0.5W. Polarity: bipolar. Power: 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.08V. Semiconductor material: silicon. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V. Voltage (collector - emitter): 30V. Original product from manufacturer: Lge Technology. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34