NPN-Transistor BC557B, TO-92, TO-226, -45V, 45V, 100mA, 100mA, TO-92, 50V

NPN-Transistor BC557B, TO-92, TO-226, -45V, 45V, 100mA, 100mA, TO-92, 50V

Quantity
Unit price
10-49
0.0333£
50-99
0.0295£
100-199
0.0258£
200+
0.0196£
+12351 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 292
Minimum: 10

NPN-Transistor BC557B, TO-92, TO-226, -45V, 45V, 100mA, 100mA, TO-92, 50V. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-Emitter Voltage VCEO: -45V. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 150MHz. CE diode: no. Collector current Ic [A]: 100mA. Collector-Base Voltage VCBO: -50V. Component family: PNP transistor. Conditioning: -. Configuration: PCB through-hole mounting. Cost): 6pF. Cutoff frequency ft [MHz]: 150 MHz. DC Collector/Base Gain hFE min.: 200. FT: 150 MHz. Gain hfe: 200. Ic(pulse): 200mA. Information: -. MSL: -. Manufacturer's marking: BC557B. Max hFE gain: 450. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Maximum saturation voltage VCE(sat): 0.65V. Minimum hFE gain: 250. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -...+150°C. Packaging: -. Pd (Power Dissipation, Max): 0.5W. Polarity: bipolar. Power: 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Series: BC. Spec info: complementary transistor (pair) BC547B. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Type: transistor for low power applications. Vcbo: 50V. Vebo: 5V. Voltage (collector - emitter): 45V. Original product from manufacturer: Cdil. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34

Technical documentation (PDF)
BC557B
49 parameters
Housing
TO-92
Housing (JEDEC standard)
TO-226
Collector-Emitter Voltage VCEO
-45V
Collector-emitter voltage Uceo [V]
45V
Collector current Ic [A], max.
100mA
Collector current
100mA
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
50V
Assembly/installation
PCB through-hole mounting
BE diode
no
Bandwidth MHz
150MHz
CE diode
no
Collector current Ic [A]
100mA
Collector-Base Voltage VCBO
-50V
Component family
PNP transistor
Configuration
PCB through-hole mounting
Cost)
6pF
Cutoff frequency ft [MHz]
150 MHz
DC Collector/Base Gain hFE min.
200
FT
150 MHz
Gain hfe
200
Ic(pulse)
200mA
Manufacturer's marking
BC557B
Max hFE gain
450
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.5W
Maximum saturation voltage VCE(sat)
0.65V
Minimum hFE gain
250
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
0.5W
Polarity
bipolar
Power
0.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Series
BC
Spec info
complementary transistor (pair) BC547B
Technology
'Epitaxial Planar Transistor'
Type of transistor
PNP
Type
transistor for low power applications
Vcbo
50V
Vebo
5V
Voltage (collector - emitter)
45V
Original product from manufacturer
Cdil
Minimum quantity
10