| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
NPN transistor BC546C, 100mA, TO-92, TO-92, 65V
Quantity
Unit price
10-99
0.0446£
100-199
0.0390£
200-499
0.0345£
500+
0.0289£
| Equivalence available | |
| Quantity in stock: 237 |
NPN transistor BC546C, 100mA, TO-92, TO-92, 65V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 6pF. FT: 150 MHz. Ic(pulse): 200mA. Max hFE gain: 800. Minimum hFE gain: 420. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 80V. Vebo: 6V. Original product from manufacturer: Lge Technology. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34
BC546C
25 parameters
Collector current
100mA
Housing
TO-92
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
65V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
6pF
FT
150 MHz
Ic(pulse)
200mA
Max hFE gain
800
Minimum hFE gain
420
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.25V
Semiconductor material
silicon
Technology
'Planar Epitaxial transistor'
Type of transistor
NPN
Vcbo
80V
Vebo
6V
Original product from manufacturer
Lge Technology
Minimum quantity
10