NPN transistor 2SD712, 4A, 100V
Quantity
Unit price
1-4
0.83£
5-49
0.66£
50-99
0.56£
100+
0.51£
| Quantity in stock: 21 |
NPN transistor 2SD712, 4A, 100V. Collector current: 4A. Collector/emitter voltage Vceo: 100V. FT: 8 MHz. Function: -. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SB682. Type of transistor: NPN. Original product from manufacturer: Mitsubishi Electric Semiconductor. Quantity in stock updated on 31/10/2025, 09:24
2SD712
9 parameters
Collector current
4A
Collector/emitter voltage Vceo
100V
FT
8 MHz
Pd (Power Dissipation, Max)
30W
Quantity per case
1
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SB682
Type of transistor
NPN
Original product from manufacturer
Mitsubishi Electric Semiconductor