NPN transistor 2SC5149, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V

NPN transistor 2SC5149, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V

Quantity
Unit price
1-4
1.74£
5-24
1.43£
25-49
1.21£
50+
1.09£
Quantity in stock: 826

NPN transistor 2SC5149, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. Darlington transistor?: no. FT: 2 MHz. Function: fast operation, for horizontal deflection (TV). Ic(pulse): 16A. Marking on the case: C5149. Max hFE gain: 25. Minimum hFE gain: 8. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. Saturation voltage VCE(sat): 5V. Semiconductor material: silicon. Spec info: 'Triple Diffused MESA Type'. Temperature: +150°C. Tf(max): 0.5us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Original product from manufacturer: Toshiba. Quantity in stock updated on 13/11/2025, 12:12

Technical documentation (PDF)
2SC5149
24 parameters
Collector current
8A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
2-16E3A
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
Darlington transistor?
no
FT
2 MHz
Function
fast operation, for horizontal deflection (TV)
Ic(pulse)
16A
Marking on the case
C5149
Max hFE gain
25
Minimum hFE gain
8
Number of terminals
3
Pd (Power Dissipation, Max)
50W
Quantity per case
1
Saturation voltage VCE(sat)
5V
Semiconductor material
silicon
Spec info
'Triple Diffused MESA Type'
Temperature
+150°C
Tf(max)
0.5us
Tf(min)
0.2us
Type of transistor
NPN
Vcbo
1500V
Original product from manufacturer
Toshiba