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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 15A, 160V - 2SC4388

NPN transistor, 15A, 160V - 2SC4388
[TITLE]
Quantity excl. VAT VAT incl.
1 - 3 4.15£ 4.98£
Quantity U.P
1 - 3 4.15£ 4.98£
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Quantity in stock : 3
Set of 1

NPN transistor, 15A, 160V - 2SC4388. NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 85W. Type of transistor: NPN. Vcbo: 200V. Spec info: complementary transistor (pair) 2SA1673. Quantity in stock updated on 21/04/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 51
2SC3263

2SC3263

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 230V. Collector current: 15A. Housing: TO-3P (...
2SC3263
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 230V. Cost): 250pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Max hFE gain: 140. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1294. BE diode: no. CE diode: no
2SC3263
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 230V. Cost): 250pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Max hFE gain: 140. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1294. BE diode: no. CE diode: no
Set of 1
2.80£ VAT incl.
(2.33£ excl. VAT)
2.80£
Quantity in stock : 143
MJL21194

MJL21194

NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( T...
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
MJL21194
NPN transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
Set of 1
8.02£ VAT incl.
(6.68£ excl. VAT)
8.02£

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MJL21193

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2SA940

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2SC5200

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2N3773

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MJ2955

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