NPN-Transistor 2SA1370, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 1.7pF. CE diode: no. Cost): 2.6pF. FT: 150 MHz. Function: video. Ic(pulse): 200mA. Max hFE gain: 320. Maximum saturation voltage VCE(sat): 0.6V. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. Semiconductor material: silicon. Technology: 'Epitaxial Planar Transistor'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 200V. Vebo: 5V. Original product from manufacturer: Sanyo. Quantity in stock updated on 13/11/2025, 01:37