| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
NPN-Transistor 2SA1360, 0.05A, TO-126 (TO-225, SOT-32), 2-8H1A, 150V
Quantity
Unit price
1-4
1.20£
5-9
0.97£
10-24
0.83£
25-49
0.75£
50+
0.63£
| Equivalence available | |
| Quantity in stock: 52 |
NPN-Transistor 2SA1360, 0.05A, TO-126 (TO-225, SOT-32), 2-8H1A, 150V. Collector current: 0.05A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): 2-8H1A. Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 2.5pF. FT: 200 MHz. Function: NF-L. Max hFE gain: 240. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 80. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 5W. Quantity per case: 1. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SC3423. Type of transistor: PNP. Vcbo: 150V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 13/11/2025, 01:37
2SA1360
22 parameters
Collector current
0.05A
Housing
TO-126 (TO-225, SOT-32)
Housing (according to data sheet)
2-8H1A
Collector/emitter voltage Vceo
150V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
2.5pF
FT
200 MHz
Function
NF-L
Max hFE gain
240
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
80
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
5W
Quantity per case
1
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SC3423
Type of transistor
PNP
Vcbo
150V
Vebo
5V
Original product from manufacturer
Toshiba