NPN-Transistor 2SA1015Y, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 4pF. FT: 80 MHz. Function: hFE.120-240. Marking on the case: 1015 Y. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Operating temperature: -...+125°C. Pd (Power Dissipation, Max): 0.4W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SC1815Y. Technology: 'Epitaxial Type (PCT Process)'. Temperature: +125°C. Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Original product from manufacturer: Toshiba. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 01:37