NPN transistor 2N5088, TO-92, 100mA, TO-92, 30 v

NPN transistor 2N5088, TO-92, 100mA, TO-92, 30 v

Quantity
Unit price
1-4
0.19£
5-49
0.15£
50-99
0.13£
100-199
0.12£
200+
0.0950£
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Quantity in stock: 6369

NPN transistor 2N5088, TO-92, 100mA, TO-92, 30 v. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 10pF. CE diode: no. Collector current Ic [A]: 50mA. Cost): 4pF. Darlington transistor?: no. FT: 50 MHz. Frequency: 50MHz. Function: HI-FI low noise pre-amplifier. Gain hfe: 300...900. Max hFE gain: 900. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 300. Number of terminals: 3. Pd (Power Dissipation, Max): 625W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 35V. Voltage (collector - emitter): 30V. Original product from manufacturer: Fairchild. Quantity in stock updated on 13/11/2025, 01:37

Technical documentation (PDF)
2N5088
27 parameters
Housing
TO-92
Collector current
100mA
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
30 v
Assembly/installation
PCB through-hole mounting
BE diode
no
C(in)
10pF
CE diode
no
Collector current Ic [A]
50mA
Cost)
4pF
Darlington transistor?
no
FT
50 MHz
Frequency
50MHz
Function
HI-FI low noise pre-amplifier
Gain hfe
300...900
Max hFE gain
900
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
300
Number of terminals
3
Pd (Power Dissipation, Max)
625W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Type of transistor
NPN
Vcbo
35V
Voltage (collector - emitter)
30V
Original product from manufacturer
Fairchild