N-channel transistor SKM400GB126D, 330A, other, other, 1200V

N-channel transistor SKM400GB126D, 330A, other, other, 1200V

Quantity
Unit price
1-3
309.75£
4-7
295.64£
8-19
285.16£
20-49
276.34£
50+
262.72£
Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 7

N-channel transistor SKM400GB126D, 330A, other, other, 1200V. Ic(T=100°C): 330A. Housing: other. Housing (according to data sheet): other. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 23.1pF. CE diode: yes. Channel type: N. Collector current: 470A. Cost): 1.9pF. Dimensions: 106.4x61.4x30.5mm. Function: High Power IGBT. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 600A. Maximum saturation voltage VCE(sat): 2.15V. Number of terminals: 7. Operating temperature: -40...+125°C. RoHS: yes. Saturation voltage VCE(sat): 1.7V. Spec info: IFSM--2200Ap (t=10ms). Td(off): 650 ns. Td(on): 330 ns. Original product from manufacturer: Semikron. Quantity in stock updated on 13/11/2025, 12:42

SKM400GB126D
26 parameters
Ic(T=100°C)
330A
Housing
other
Housing (according to data sheet)
other
Collector/emitter voltage Vceo
1200V
Assembly/installation
PCB through-hole mounting
C(in)
23.1pF
CE diode
yes
Channel type
N
Collector current
470A
Cost)
1.9pF
Dimensions
106.4x61.4x30.5mm
Function
High Power IGBT
Gate/emitter voltage VGE(th) min.
5V
Gate/emitter voltage VGE(th)max.
6.5V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
600A
Maximum saturation voltage VCE(sat)
2.15V
Number of terminals
7
Operating temperature
-40...+125°C
RoHS
yes
Saturation voltage VCE(sat)
1.7V
Spec info
IFSM--2200Ap (t=10ms)
Td(off)
650 ns
Td(on)
330 ns
Original product from manufacturer
Semikron