N-channel transistor PSMN015-100P, 60.8A, 75A, 500uA, 12m Ohms, TO-220, TO-220AB ( SOT78 ), 100V. ID (T=100°C): 60.8A. ID (T=25°C): 75A. Idss (max): 500uA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 4900pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 390pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.05uA. Id(imp): 240A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Spec info: IDM--240A (Tmb 25°C; pulsed). Td(off): 95 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 13/11/2025, 07:30